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Wednesday, May 20, 2020 | History

2 edition of Physics of narrow gap semiconductors found in the catalog.

Physics of narrow gap semiconductors

Physics of narrow gap semiconductors

Proceedings of the III international conference, Warszawa, September 12-15, 1977

  • 113 Want to read
  • 25 Currently reading

Published by distribution for the U.S.A. and Canada, Elsevier/North Holland .
Written in English


The Physical Object
Number of Pages481
ID Numbers
Open LibraryOL7534394M
ISBN 100444998012
ISBN 109780444998019

Physics and Properties of Narrow Gap Semiconductors helps readers to understand semiconductor physics and related areas of materials science and how they relate to advanced opto-electronic devices. BOOK NOTES PHYSICSOF SEMICONDUCTORS,by A. F. Ioffe. pages, diagrams, 6 X 9 in. New York, Academic Press Inc., Price, $ Translated from the Russian work of , the English version of Physics of Semiconductors has been revised and supplemented by the author, who is Director of the Institute of Semiconductors for the U.S.S.R. Seven chapters .

  The band gap is a very important property of a semiconductor because it determines its color and conductivity. Many of the applications of semiconductors are related to band gaps: Narrow gap materials (Hg x Cd 1-x Te, VO 2, InSb, Bi 2 Te 3) are used as infrared photodetectors and thermoelectrics (which convert heat to electricity).   Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the Author: Junichiro Kono, Jean Leotin.

Device Physics of Narrow Gap Semiconductors - - Junhao Chu,Arden Sher - Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the . Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications.


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Physics of narrow gap semiconductors Download PDF EPUB FB2

Physics of Narrow Gap Semiconductors Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, Editors: Gornik, E., Heinrich, H., Palmetzhofer, L.

(Eds.) Free Preview. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.

In this book, the authors offer clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications.1/5(1).

Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared by: Physics of Narrow Gap Semiconductors Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications.

Narrow-Gap Semiconductors. Authors; Ralf Dornhaus; Günter Nimtz; Burghard Schlicht; Book. Citations; Downloads; Part of the Springer Tracts in Modern Physics book series (STMP, volume 98) Log in to check access. Buy eBook. USD Buy eBook.

USD Instant download; Readable on all devices Narrow-gap lead salts. Nimtz, B. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS) was held at the University of Surrey, Guildford, UK in July 15 rows  Springer Tracts in Modern Phys ISBN (print) ISBN.

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure Read more. Device Physics of Narrow Gap Semiconductors (Microdevices) eBook: Chu, Junhao, Sher, Arden: : Kindle Store1/5(1).

The Physics of Semimetals and Narrow Gap Semiconductors by Carter, D.L. [Ed.] and R.T. [Ed.] Bate: and a great selection of related books, art and collectibles available now at   Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.

Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination Brand: Springer New York. Physics and Properties of Narrow Gap Semiconductors offers clear descriptions of crystal growth, material science, and device physics of these unique materials.

Topics covered include energy band structures, optical and transport properties, phonons, impurities and defects, recombination, and surface and interface properties. In narrow gap semiconductors, the recombination rate can be approximately simplified to be ∝ exp(E g /2k B T) at room temperat 27, where k.

Book Description. Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).

Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).

Festkörperprobleme () Narrow bandgap semiconductors Christian Vérié Laboratoire de Magnétisme et de Physique des Solides, C.N. R.S., 1, place A. Briand (92) Meudon-Bellevue (France) Summary: The main band structure features of various narrow bandgap semiconductor families are by: 4.

Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).

In particular, it explore. Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps.

Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices.

Narrow gap semiconductors are the most important materials for the. Narrow band gap semiconductors with appropriate band structure can play a similar photosensitizing role as organic dyes when they are coupled with TiO 2 [84–86].If the optical absorbance of narrow band gap semiconductors can gradually be tuned to absorb in the visible region by controlling the particle size, the overall photoactivity of the hybrid semiconductor .Physics and Fundamental Properties) and the forthcoming book (Narrow Gap Semiconductors (Vol.

II): Devices and Low-Dimensional Physics) aim, in the two volumes, at characterizing a variety of narrow-gap semi-conductor materials and revealing the intrinsic physical principles that govern their behavior.

The discussions dedicated to narrow-gap.Sizmann et al. () were the first to report the spectra of electron-cyclotron resonance in the narrow-gap semiconductors. Since the signal of the spin resonance is 20 times weaker than that compared with cyclotron resonance, it is difficult to detect.